skip to main content

SciTech ConnectSciTech Connect

Title: Ultraviolet emission from low resistance Cu{sub 2}SnS{sub 3}/SnO{sub 2} and CuInS{sub 2}/Sn:In{sub 2}O{sub 3} nanowires

SnO{sub 2} and Sn:In{sub 2}O{sub 3} nanowires were grown on Si(001), and p-n junctions were fabricated in contact with p-type Cu{sub 2}S which exhibited rectifying current–voltage characteristics. Core-shell Cu{sub 2}SnS{sub 3}/SnO{sub 2} and CuInS{sub 2}/Sn:In{sub 2}O{sub 3} nanowires were obtained by depositing copper and post-growth processing under H{sub 2}S between 100 and 500 °C. These consist mainly of tetragonal rutile SnO{sub 2} and cubic bixbyite In{sub 2}O{sub 3}. We observe photoluminescence at 3.65 eV corresponding to band edge emission from SnO{sub 2} quantum dots in the Cu{sub 2}SnS{sub 3}/SnO{sub 2} nanowires due to electrostatic confinement. The Cu{sub 2}SnS{sub 3}/SnO{sub 2} nanowires assemblies had resistances of 100 Ω similar to CuInS{sub 2}/In{sub 2}O{sub 3} nanowires which exhibited photoluminescence at 3.0 eV.
Authors:
;  [1] ;  [2]
  1. Nanostructured Materials and Devices Laboratory, School Of Engineering and Department of Mechanical and Manufacturing Engineering, University of Cyprus, P.O. Box 20537, Nicosia 1678 (Cyprus)
  2. Research Center of Ultrafast Science, Department of Physics, University of Cyprus, P.O. Box 20537, Nicosia 1678 (Cyprus)
Publication Date:
OSTI Identifier:
22415222
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL materials; Journal Volume: 2; Journal Issue: 11; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CONFINEMENT; COPPER SULFIDES; CRYSTAL GROWTH; ELECTRIC POTENTIAL; EMISSION SPECTROSCOPY; EV RANGE; HYDROGEN SULFIDES; INDIUM OXIDES; INDIUM SULFIDES; NANOWIRES; PHOTOLUMINESCENCE; P-N JUNCTIONS; P-TYPE CONDUCTORS; QUANTUM DOTS; TIN OXIDES; ULTRAVIOLET RADIATION