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Title: Erratum: “Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN” [Appl. Phys. Lett. 105, 193509 (2014)]

No abstract prepared.
Authors:
; ; ; ; ;  [1]
  1. NTT Basic Research Laboratories, NTT Corporation 3-1 Morinosato Wakamiya, Atsugi-shi, 243-0198 (Japan)
Publication Date:
OSTI Identifier:
22415217
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; BORON NITRIDES; ELECTRON MOBILITY; GALLIUM NITRIDES; SUBSTRATES; TRANSISTORS