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Title: Synthesis and ionic liquid gating of hexagonal WO{sub 3} thin films

Via thin film deposition techniques, the meta-stable in bulk crystal hexagonal phase of tungsten oxide (hex-WO{sub 3}) is stabilized as a thin film. The hex-WO{sub 3} structure is potentially promising for numerous applications and is related to the structure for superconducting compounds found in WO{sub 3}. Utilizing ionic liquid gating, carriers were electrostatically induced in the films and an insulator-to-metal transition is observed. These results show that ionic liquid gating is a viable technique to alter the electrical transport properties of WO{sub 3}.
Authors:
; ; ; ;  [1] ; ; ;  [2]
  1. Department of Applied Physics, Stanford University, Stanford, California 94305, USA and Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States)
  2. Department of Applied Electronics, Tokyo University of Science, Katsushika-ku, Tokyo 125-8585 (Japan)
Publication Date:
OSTI Identifier:
22415197
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; DEPOSITION; HEXAGONAL LATTICES; LIQUIDS; METALS; MOLTEN SALTS; THIN FILMS; TUNGSTATES; TUNGSTEN OXIDES