skip to main content

SciTech ConnectSciTech Connect

Title: Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and {sup 15}N isotopes

This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual marker method for Raman spectroscopy. By combining these techniques, we demonstrate the effectiveness in studying strain in the vertical direction. This technique will enable the precise probing of properties of buried active layers in heterostructures, and can be extended in the future to vertical devices such as those used for optical emitters and for power electronics.
Authors:
; ; ; ; ; ; ; ; ; ; ;  [1] ;  [1] ;  [2]
  1. Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
  2. (Russian Federation)
Publication Date:
OSTI Identifier:
22415188
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; GALLIUM NITRIDES; NITROGEN; NITROGEN 15; QUANTUM WELLS; RAMAN SPECTROSCOPY; STRAINS