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Title: Raman spectroscopic characterization of the core-rim structure in reaction bonded boron carbide ceramics

Raman spectroscopy was used to characterize the microstructure of reaction bonded boron carbide ceramics. Compositional and structural gradation in the silicon-doped boron carbide phase (rim), which develops around the parent boron carbide region (core) due to the reaction between silicon and boron carbide, was evaluated using changes in Raman peak position and intensity. Peak shifting and intensity variation from the core to the rim region was attributed to changes in the boron carbide crystal structure based on experimental Raman observations and ab initio calculations reported in literature. The results were consistent with compositional analysis determined by energy dispersive spectroscopy. The Raman analysis revealed the substitution of silicon atoms first into the linear 3-atom chain, and then into icosahedral units of the boron carbide structure. Thus, micro-Raman spectroscopy provided a non-destructive means of identifying the preferential positions of Si atoms in the boron carbide lattice.
Authors:
;  [1] ; ;  [2] ; ; ;  [3]
  1. Department of Mechanical and Aerospace Engineering, University of Florida, Gainesville, Florida 32611 (United States)
  2. Program Executive Office—Soldier Protection and Individual Equipment, US Army, Fort Belvoir, Virginia 22060 (United States)
  3. M-Cubed Technologies, Inc., Newark, Delaware 19711 (United States)
Publication Date:
OSTI Identifier:
22415186
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON CARBIDES; CRYSTAL STRUCTURE; DOPED MATERIALS; MICROSTRUCTURE; RAMAN SPECTROSCOPY; SILICON