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Title: A pseudo-single-crystalline germanium film for flexible electronics

We demonstrate large-area (∼600 μm), (111)-oriented, and high-crystallinity, i.e., pseudo-single-crystalline, germanium (Ge) films at 275 °C, where the temperature is lower than the softening temperature of a flexible substrate. A modulated gold-induced layer exchange crystallization method with an atomic-layer deposited Al{sub 2}O{sub 3} barrier and amorphous-Ge/Au multilayers is established. From the Raman measurements, we can judge that the crystallinity of the obtained Ge films is higher than those grown by aluminum-induced-crystallization methods. Even on a flexible substrate, the pseudo-single-crystalline Ge films for the circuit with thin-film transistor arrays can be achieved, leading to high-performance flexible electronics based on an inorganic-semiconductor channel.
Authors:
; ; ;  [1] ; ; ;  [2] ; ; ; ;  [3]
  1. Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan)
  2. Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)
  3. Kumamoto National College of Technology, 2659-2 Suya, Koshi, Kumamoto 861-1102 (Japan)
Publication Date:
OSTI Identifier:
22415185
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM; ALUMINIUM OXIDES; CRYSTALLIZATION; GERMANIUM; GOLD; LAYERS; MONOCRYSTALS; SEMICONDUCTOR MATERIALS; SUBSTRATES; THIN FILMS