A pseudo-single-crystalline germanium film for flexible electronics
Abstract
We demonstrate large-area (∼600 μm), (111)-oriented, and high-crystallinity, i.e., pseudo-single-crystalline, germanium (Ge) films at 275 °C, where the temperature is lower than the softening temperature of a flexible substrate. A modulated gold-induced layer exchange crystallization method with an atomic-layer deposited Al{sub 2}O{sub 3} barrier and amorphous-Ge/Au multilayers is established. From the Raman measurements, we can judge that the crystallinity of the obtained Ge films is higher than those grown by aluminum-induced-crystallization methods. Even on a flexible substrate, the pseudo-single-crystalline Ge films for the circuit with thin-film transistor arrays can be achieved, leading to high-performance flexible electronics based on an inorganic-semiconductor channel.
- Authors:
-
- Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)
- Kumamoto National College of Technology, 2659-2 Suya, Koshi, Kumamoto 861-1102 (Japan)
- Publication Date:
- OSTI Identifier:
- 22415185
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 106; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM; ALUMINIUM OXIDES; CRYSTALLIZATION; GERMANIUM; GOLD; LAYERS; MONOCRYSTALS; SEMICONDUCTOR MATERIALS; SUBSTRATES; THIN FILMS
Citation Formats
Higashi, H., Yamada, S., Kanashima, T., Hamaya, K., E-mail: hamaya@ee.es.osaka-u.ac.jp, Kasahara, K., Park, J. -H., Miyao, M., Kudo, K., Okamoto, H., Moto, K., and Tsunoda, I. A pseudo-single-crystalline germanium film for flexible electronics. United States: N. p., 2015.
Web. doi:10.1063/1.4906612.
Higashi, H., Yamada, S., Kanashima, T., Hamaya, K., E-mail: hamaya@ee.es.osaka-u.ac.jp, Kasahara, K., Park, J. -H., Miyao, M., Kudo, K., Okamoto, H., Moto, K., & Tsunoda, I. A pseudo-single-crystalline germanium film for flexible electronics. United States. https://doi.org/10.1063/1.4906612
Higashi, H., Yamada, S., Kanashima, T., Hamaya, K., E-mail: hamaya@ee.es.osaka-u.ac.jp, Kasahara, K., Park, J. -H., Miyao, M., Kudo, K., Okamoto, H., Moto, K., and Tsunoda, I. 2015.
"A pseudo-single-crystalline germanium film for flexible electronics". United States. https://doi.org/10.1063/1.4906612.
@article{osti_22415185,
title = {A pseudo-single-crystalline germanium film for flexible electronics},
author = {Higashi, H. and Yamada, S. and Kanashima, T. and Hamaya, K., E-mail: hamaya@ee.es.osaka-u.ac.jp and Kasahara, K. and Park, J. -H. and Miyao, M. and Kudo, K. and Okamoto, H. and Moto, K. and Tsunoda, I.},
abstractNote = {We demonstrate large-area (∼600 μm), (111)-oriented, and high-crystallinity, i.e., pseudo-single-crystalline, germanium (Ge) films at 275 °C, where the temperature is lower than the softening temperature of a flexible substrate. A modulated gold-induced layer exchange crystallization method with an atomic-layer deposited Al{sub 2}O{sub 3} barrier and amorphous-Ge/Au multilayers is established. From the Raman measurements, we can judge that the crystallinity of the obtained Ge films is higher than those grown by aluminum-induced-crystallization methods. Even on a flexible substrate, the pseudo-single-crystalline Ge films for the circuit with thin-film transistor arrays can be achieved, leading to high-performance flexible electronics based on an inorganic-semiconductor channel.},
doi = {10.1063/1.4906612},
url = {https://www.osti.gov/biblio/22415185},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 4,
volume = 106,
place = {United States},
year = {Mon Jan 26 00:00:00 EST 2015},
month = {Mon Jan 26 00:00:00 EST 2015}
}