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Title: Type-I interband cascade lasers near 3.2 μm

Interband cascade (IC) lasers have been demonstrated based on type-I InGaAsSb/AlAsSb quantum well (QW) active regions. These type-I IC lasers are composed of 6-cascade stages and InAs/AlSb superlattice cladding layers. In contrast to the use of quinary AlGaInAsSb barriers for active region in previous type-I QW lasers, the type-I QW active region in each stage is sandwiched by digitally graded multiple InAs/AlSb QW electron injector and GaSb/AlSb QW hole injector. The fabricated type-I IC lasers were able to operate in continuous wave and pulsed modes at temperatures up to 306 and 365 K, respectively. The threshold current densities of broad-area lasers were around 300 A/cm{sup 2} at 300 K with a lasing wavelength near 3.2 μm. The implications and prospects of these initial results are discussed.
Authors:
; ;  [1] ; ; ; ; ;  [2] ;  [3]
  1. School of Electrical and Computer Engineering, University of Oklahoma, Norman, Oklahoma 73019 (United States)
  2. National Research Council of Canada, Ottawa K1A 0R6 (Canada)
  3. Homer L. Dodge Department of Physics and Astronomy, University of Oklahoma, Norman, Oklahoma 73019 (United States)
Publication Date:
OSTI Identifier:
22415177
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CLADDING; GALLIUM ANTIMONIDES; INDIUM ARSENIDES; INTERMEDIATE INFRARED RADIATION; QUANTUM WELLS; SEMICONDUCTOR LASERS; TEMPERATURE RANGE 0273-0400 K; THRESHOLD CURRENT