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Title: InAs-based interband-cascade-lasers emitting around 7 μm with threshold current densities below 1 kA/cm{sup 2} at room temperature

Interband cascade lasers (ICLs) grown on InAs substrates with threshold current densities below 1 kA/cm{sup 2} are presented. Two cascade designs with different lengths of the electron injector were investigated. Using a cascade design with 3 InAs quantum wells (QWs) in the electron injector, a device incorporating 22 stages in the active region exhibited a threshold current density of 940 A/cm{sup 2} at a record wavelength of 7 μm for ICLs operating in pulsed mode at room temperature. By investigating the influence of the number of stages on the device performance for a cascade design with 2 QWs in the electron injector, a further reduction of the threshold current density to 800 A/cm{sup 2} was achieved for a 30 stage device.
Authors:
; ;  [1] ;  [1] ;  [2]
  1. Technische Physik, University of Würzburg, 97074 Würzburg (Germany)
  2. (United Kingdom)
Publication Date:
OSTI Identifier:
22415170
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CURRENT DENSITY; ELECTRONS; INDIUM ARSENIDES; QUANTUM WELLS; SEMICONDUCTOR LASERS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THRESHOLD CURRENT