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Title: High-Q silicon carbide photonic-crystal cavities

We demonstrate one-dimensional photonic-crystal nanobeam cavities in amorphous silicon carbide. The fundamental mode exhibits intrinsic optical quality factor as high as 7.69 × 10{sup 4} with mode volume ∼0.60(λ/n){sup 3} at wavelength 1.5 μm. A corresponding Purcell factor value of ∼10{sup 4} is the highest reported to date in silicon carbide optical cavities. The device exhibits great potential for integrated nonlinear photonics and cavity nano-optomechanics.
Authors:
 [1] ;  [2] ;  [1] ;  [3]
  1. Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627 (United States)
  2. Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States)
  3. (United States)
Publication Date:
OSTI Identifier:
22415168
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 77 NANOSCIENCE AND NANOTECHNOLOGY; CRYSTAL DEFECTS; CRYSTALS; NANOSTRUCTURES; NONLINEAR PROBLEMS; QUALITY FACTOR; SILICON CARBIDES