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Title: Direct nano-patterning of graphene with helium ion beams

Helium ion microscopy (HIM) was used for direct nano-patterning of single-layer graphene (SLG) on SiO{sub 2}/Si substrates. This technique involves irradiation of the sample with accelerated helium ions (He{sup +}). Doses of 2.0 × 10{sup 16 }He{sup + }cm{sup −2} from a 30 kV beam induced a metal-insulator transition in the SLG. The resolution of HIM patterning on SLG was investigated by fabricating nanoribbons and nanostructures. Analysis of scanning capacitance microscopy measurements revealed that the spatial resolution of HIM patterning depended on the dosage of He{sup +} in a non-monotonic fashion. Increasing the dose from 2.0 × 10{sup 16} to 5.0 × 10{sup 16 }He{sup + }cm{sup −2} improved the spatial resolution to several tens of nanometers. However, doses greater than 1.0 × 10{sup 17 }He{sup + }cm{sup −2} degraded the patterning characteristics. Direct patterning using HIM is a versatile approach to graphene fabrication and can be applied to graphene-based devices.
Authors:
 [1] ; ;  [2]
  1. Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba 305-8562 (Japan)
  2. Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba 305-8569 (Japan)
Publication Date:
OSTI Identifier:
22415156
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; GRAPHENE; HELIUM IONS; ION BEAMS; NANOSTRUCTURES; SILICON OXIDES; SPATIAL RESOLUTION; SUBSTRATES