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Title: Interfacial structure in epitaxial perovskite oxides on (001) Ge crystal

We investigated the interfacial structure of hetero-epitaxial SrZr{sub 0.68}Ti{sub 0.32}O{sub 3} thin film deposited on (001) Ge single crystal via transmission electron microscopy (TEM). The results from high-resolution scanning TEM and electron energy-loss spectroscopy show an atomically abrupt interface without secondary phase. We found misfit dislocations with Burgers vector of 1/2a 〈111〉 and threading dislocations with Burgers vector of a 〈100〉. Furthermore, we observed the coupling between dislocation half-loop and anti-phase boundary induced by the lattice terrace of Ge along 〈100〉 direction and their decoupling after annealing. We proposed models based on half-loop theory to interpret the coupling and the dislocation reactions.
Authors:
 [1] ;  [2] ; ;  [3] ;  [1] ;  [4]
  1. National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Science, Collaborative Innovation Center of Advanced Materials, Nanjing University, Nanjing 210093 (China)
  2. (United States)
  3. Department of Physics, University of Texas at Arlington, 502 Yates Street, Arlington, Texas 76019 (United States)
  4. Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)
Publication Date:
OSTI Identifier:
22415154
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DISLOCATIONS; ENERGY-LOSS SPECTROSCOPY; EPITAXY; GERMANIUM; MONOCRYSTALS; OXIDES; PEROVSKITE; TRANSMISSION ELECTRON MICROSCOPY