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Title: High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate

We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500 000 cm{sup 2}/Vs at sheet charge density of 8 × 10{sup 11} cm{sup −2} and approaching 100 000 cm{sup 2}/Vs near the charge neutrality point. Lattice matching between the quantum well structure and the substrate eliminates the need for a thick buffer, enabling large back gate capacitance and efficient coupling with the conduction channels in the quantum wells. As a result, quantum Hall effects are observed in both electron and hole regimes across the hybridization gap.
Authors:
; ; ; ;  [1]
  1. HRL Laboratories, 3011 Malibu Canyon Rd, Malibu, California 90265 (United States)
Publication Date:
OSTI Identifier:
22415139
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITANCE; CHARGE DENSITY; ELECTRON MOBILITY; GALLIUM ANTIMONIDES; INDIUM ARSENIDES; QUANTUM WELLS; SHEETS; SUBSTRATES