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Title: Magneto-transport and thermoelectric properties of epitaxial FeSb{sub 2} thin film on MgO substrate

We report magneto-transport and thermoelectric properties of FeSb{sub 2} thin film epitaxially grown on the MgO substrate using molecular beam epitaxy. The film exhibits compressive strain of 1.74% owing to large lattice mismatch, whose physical consequences are nontrivial. Magnetic phase has been changed from diamagnetic in bulk, as evidenced by anomalous Hall effect (AHE) and negative magneto-resistance (MR). The FeSb{sub 2} film is semiconducting without any metallic transition unlike the bulk counterpart. In particular, hysteresis in MR with distinct feature of AHE is evident with coercive field of 500 and 110 Oe for T = 20 and 50 K, respectively. Furthermore, from the Seebeck coefficients and temperature dependence of the resistivity, it is evident that the film is semiconducting with small band gap: 3.76 meV for T < 40 K and 13.48 meV for T > 40 K, respectively, where maximum thermoelectric power factor of 12 μV/cm·K at T = 50 K.
Authors:
; ; ; ;  [1]
  1. Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22415138
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANTIMONY COMPOUNDS; CRYSTAL DEFECTS; HALL EFFECT; IRON COMPOUNDS; MAGNESIUM OXIDES; MAGNETORESISTANCE; MEV RANGE 01-10; MEV RANGE 10-100; MOLECULAR BEAM EPITAXY; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0013-0065 K; THERMOELECTRIC PROPERTIES; THIN FILMS