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Title: Localization of electrons in dome-shaped GeSi/Si islands

We report on intraband photocurrent spectroscopy of dome-shaped GeSi islands embedded in a Si matrix with n{sup +}-type bottom and top Si layers. An in-plane polarized photoresponse in the 85–160 meV energy region has been observed and ascribed to the optical excitation of electrons from states confined in the strained Si near the dome apexes to the continuum states of unstrained Si. The electron confinement is caused by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried GeSi quantum dots. Sensitivity of the device to the normal incidence radiation proves a zero-dimensional nature of confined electronic wave functions.
Authors:
 [1] ;  [2] ; ; ; ; ;  [1]
  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Science, prospekt Lavrent'eva 13, 630090 Novosibirsk (Russian Federation)
  2. (Russian Federation)
Publication Date:
OSTI Identifier:
22415137
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DOPED MATERIALS; ELECTRONS; GERMANIUM SILICIDES; LAYERS; MEV RANGE 100-1000; MEV RANGE 10-100; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SILICON; SPECTROSCOPY; WAVE FUNCTIONS