Localization of electrons in dome-shaped GeSi/Si islands

Journal Article · Mon Jan 19 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4906522· OSTI ID:22415137

Kirienko, V. V.; Bloshkin, A. A.; Armbrister, V. A.; Kuchinskaya, P. A.; Dvurechenskii, A. V. ^[1]

---

1. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Science, prospekt Lavrent'eva 13, 630090 Novosibirsk (Russian Federation)

We report on intraband photocurrent spectroscopy of dome-shaped GeSi islands embedded in a Si matrix with n{sup +}-type bottom and top Si layers. An in-plane polarized photoresponse in the 85–160 meV energy region has been observed and ascribed to the optical excitation of electrons from states confined in the strained Si near the dome apexes to the continuum states of unstrained Si. The electron confinement is caused by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried GeSi quantum dots. Sensitivity of the device to the normal incidence radiation proves a zero-dimensional nature of confined electronic wave functions.

• OSTI ID: 22415137
• Journal Information: Applied Physics Letters, Vol. 106, Issue 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DOPED MATERIALS
ELECTRONS
GERMANIUM SILICIDES
LAYERS
MEV RANGE 100-1000
MEV RANGE 10-100
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SILICON
SPECTROSCOPY
WAVE FUNCTIONS