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Title: Heavy and light hole transport in nominally undoped GaSb substrates

In this work, we report results of a study of electronic transport in nominally undoped p-type GaSb wafers typically employed as substrate material for the epitaxial growth of InAs/GaInSb type-II superlattices. Magnetic field dependent Hall-effect measurements and high-resolution mobility spectrum analysis clearly indicate p-type conductivity due to carriers in both the heavy and light hole bands. The extracted hole concentrations indicate a thermal activation energy of 17.8 meV for the dominant native acceptor-like defects. A temperature-independent effective mass ratio of 9.0 ± 0.8 was determined from the ratio of measured heavy and light hole concentrations. Over the 56 K–300 K temperature range, the light hole mobility was found to be 4.7 ± 0.7 times higher than the heavy hole mobility. The measured room temperature mobilities for the light and heavy holes were 2550 cm{sup 2}/Vs and 520 cm{sup 2}/Vs, respectively.
Authors:
; ; ; ; ;  [1] ; ;  [2]
  1. School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley WA 6009 (Australia)
  2. National Institute of Information and Communications Technology, Koganei, Tokyo 1848795 (Japan)
Publication Date:
OSTI Identifier:
22415136
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHARGE TRANSPORT; CONCENTRATION RATIO; GALLIUM ANTIMONIDES; HALL EFFECT; HOLE MOBILITY; HOLES; INDIUM ARSENIDES; MAGNETIC FIELDS; SEMICONDUCTOR MATERIALS; SUBSTRATES; SUPERLATTICES; TEMPERATURE RANGE 0273-0400 K