skip to main content

SciTech ConnectSciTech Connect

Title: Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier

We report on Gallium Nitride-based tunneling hot electron transistor amplifier with common-emitter current gain greater than 1. Small signal current gain up to 5 and dc current gain of 1.3 were attained in common-emitter configuration with collector current density in excess of 50 kA/cm{sup 2}. The use of a combination of 1 nm GaN/3 nm AlN layers as an emitter tunneling barrier was found to improve the energy collimation of the injected electrons. These results represent demonstration of unipolar vertical transistors in the III-nitride system that can potentially lead to higher frequency and power microwave devices.
Authors:
; ; ;  [1] ;  [2]
  1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
  2. Department of Electrical and Computer Engineering, The Johns Hopkins University, Baltimore, Maryland 21218 (United States)
Publication Date:
OSTI Identifier:
22415134
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM NITRIDES; ELECTRONS; GAIN; GALLIUM NITRIDES; LAYERS; TRANSISTOR AMPLIFIERS; TUNNEL EFFECT