Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier
Abstract
We report on Gallium Nitride-based tunneling hot electron transistor amplifier with common-emitter current gain greater than 1. Small signal current gain up to 5 and dc current gain of 1.3 were attained in common-emitter configuration with collector current density in excess of 50 kA/cm{sup 2}. The use of a combination of 1 nm GaN/3 nm AlN layers as an emitter tunneling barrier was found to improve the energy collimation of the injected electrons. These results represent demonstration of unipolar vertical transistors in the III-nitride system that can potentially lead to higher frequency and power microwave devices.
- Authors:
-
- Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
- Department of Electrical and Computer Engineering, The Johns Hopkins University, Baltimore, Maryland 21218 (United States)
- Publication Date:
- OSTI Identifier:
- 22415134
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 106; Journal Issue: 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM NITRIDES; ELECTRONS; GAIN; GALLIUM NITRIDES; LAYERS; TRANSISTOR AMPLIFIERS; TUNNEL EFFECT
Citation Formats
Yang, Zhichao, Zhang, Yuewei, Nath, Digbijoy N., Rajan, Siddharth, and Khurgin, Jacob B. Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier. United States: N. p., 2015.
Web. doi:10.1063/1.4906287.
Yang, Zhichao, Zhang, Yuewei, Nath, Digbijoy N., Rajan, Siddharth, & Khurgin, Jacob B. Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier. United States. https://doi.org/10.1063/1.4906287
Yang, Zhichao, Zhang, Yuewei, Nath, Digbijoy N., Rajan, Siddharth, and Khurgin, Jacob B. 2015.
"Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier". United States. https://doi.org/10.1063/1.4906287.
@article{osti_22415134,
title = {Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier},
author = {Yang, Zhichao and Zhang, Yuewei and Nath, Digbijoy N. and Rajan, Siddharth and Khurgin, Jacob B.},
abstractNote = {We report on Gallium Nitride-based tunneling hot electron transistor amplifier with common-emitter current gain greater than 1. Small signal current gain up to 5 and dc current gain of 1.3 were attained in common-emitter configuration with collector current density in excess of 50 kA/cm{sup 2}. The use of a combination of 1 nm GaN/3 nm AlN layers as an emitter tunneling barrier was found to improve the energy collimation of the injected electrons. These results represent demonstration of unipolar vertical transistors in the III-nitride system that can potentially lead to higher frequency and power microwave devices.},
doi = {10.1063/1.4906287},
url = {https://www.osti.gov/biblio/22415134},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 3,
volume = 106,
place = {United States},
year = {Mon Jan 19 00:00:00 EST 2015},
month = {Mon Jan 19 00:00:00 EST 2015}
}
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