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Title: Valence band offset in heterojunctions between crystalline silicon and amorphous silicon (sub)oxides (a-SiO{sub x}:H, 0 < x < 2)

Abstract

The heterojunction between amorphous silicon (sub)oxides (a-SiO{sub x}:H, 0 < x < 2) and crystalline silicon (c-Si) is investigated. We combine chemical vapor deposition with in-system photoelectron spectroscopy in order to determine the valence band offset ΔE{sub V} and the interface defect density, being technologically important junction parameters. ΔE{sub V} increases from ≈0.3 eV for the a-Si:H/c-Si interface to >4 eV for the a-SiO{sub 2}/c-Si interface, while the electronic quality of the heterointerface deteriorates. High-bandgap a-SiO{sub x}:H is therefore unsuitable for the hole contact in heterojunction solar cells, due to electronic transport hindrance resulting from the large ΔE{sub V}. Our method is readily applicable to other heterojunctions.

Authors:
; ; ; ;  [1]
  1. Institute Silicon Photovoltaics, Helmholtz-Zentrum Berlin für Materialien und Energie, Kekuléstr. 5, D-12489 Berlin (Germany)
Publication Date:
OSTI Identifier:
22415126
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BAND THEORY; CHEMICAL VAPOR DEPOSITION; GRADED BAND GAPS; HETEROJUNCTIONS; HYDROGEN; PHOTOELECTRON SPECTROSCOPY; SILICON; SILICON OXIDES; SOLAR CELLS

Citation Formats

Liebhaber, M., Mews, M., Schulze, T. F., Korte, L., E-mail: korte@helmholtz-berlin.de, Rech, B., and Lips, K. Valence band offset in heterojunctions between crystalline silicon and amorphous silicon (sub)oxides (a-SiO{sub x}:H, 0 < x < 2). United States: N. p., 2015. Web. doi:10.1063/1.4906195.
Liebhaber, M., Mews, M., Schulze, T. F., Korte, L., E-mail: korte@helmholtz-berlin.de, Rech, B., & Lips, K. Valence band offset in heterojunctions between crystalline silicon and amorphous silicon (sub)oxides (a-SiO{sub x}:H, 0 < x < 2). United States. https://doi.org/10.1063/1.4906195
Liebhaber, M., Mews, M., Schulze, T. F., Korte, L., E-mail: korte@helmholtz-berlin.de, Rech, B., and Lips, K. 2015. "Valence band offset in heterojunctions between crystalline silicon and amorphous silicon (sub)oxides (a-SiO{sub x}:H, 0 < x < 2)". United States. https://doi.org/10.1063/1.4906195.
@article{osti_22415126,
title = {Valence band offset in heterojunctions between crystalline silicon and amorphous silicon (sub)oxides (a-SiO{sub x}:H, 0 < x < 2)},
author = {Liebhaber, M. and Mews, M. and Schulze, T. F. and Korte, L., E-mail: korte@helmholtz-berlin.de and Rech, B. and Lips, K.},
abstractNote = {The heterojunction between amorphous silicon (sub)oxides (a-SiO{sub x}:H, 0 < x < 2) and crystalline silicon (c-Si) is investigated. We combine chemical vapor deposition with in-system photoelectron spectroscopy in order to determine the valence band offset ΔE{sub V} and the interface defect density, being technologically important junction parameters. ΔE{sub V} increases from ≈0.3 eV for the a-Si:H/c-Si interface to >4 eV for the a-SiO{sub 2}/c-Si interface, while the electronic quality of the heterointerface deteriorates. High-bandgap a-SiO{sub x}:H is therefore unsuitable for the hole contact in heterojunction solar cells, due to electronic transport hindrance resulting from the large ΔE{sub V}. Our method is readily applicable to other heterojunctions.},
doi = {10.1063/1.4906195},
url = {https://www.osti.gov/biblio/22415126}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 3,
volume = 106,
place = {United States},
year = {Mon Jan 19 00:00:00 EST 2015},
month = {Mon Jan 19 00:00:00 EST 2015}
}