Silver nanowires for transparent conductive electrode to GaN-based light-emitting diodes
- Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung 429-793 (Korea, Republic of)
- Department of Flexible and Printable Electronics, Polymer Materials Fusion Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)
Transparent, conductive, and uniform Ag nanowires (NWs) were introduced to improve the optical performance of GaN-based light-emitting diodes (LEDs) by a spin-coating technique. The Ag NWs acted as a current spreading layer, exhibiting high transmittance and low sheet resistance, and ultimately leading to high performance GaN-based LEDs with an ultra large size of 5 × 5 mm{sup 2}. Compared to the transmittance of conventional LEDs without Ag NWs, the relative transmittance of LEDs with Ag NWs was approximately 90% of the overall wavelength region. However, the electroluminescence (EL) intensity of LED with Ag NWs was much higher than that of conventional LEDs without Ag NWs for injection current above 45 mA. In addition, the EL full width at half maximum of LEDs with Ag NWs was much lower than that of conventional LEDs without Ag NWs. Based on these results, we believe that the enhanced optical performance of ultra large LEDs was due to an increase in the current spreading effect.
- OSTI ID:
- 22415124
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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