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Title: Correlation between switching to n-type conductivity and structural defects in highly Mg-doped InN

The effect of Mg doping on the microstructure of InN epitaxial films in relation to their free-charge carrier properties has been investigated by transmission electron microscopy (TEM) and aberration corrected scanning TEM. We observe a direct correlation between Mg concentration and the formation of stacking faults. The threading dislocation density is found to be independent of Mg concentration. The critical Mg concentration for the on-set of stacking faults formation is determined and found to correlate with the switch from p- to n-type conductivity in InN. Potential mechanisms involving stacking faults and point defect complexes are invoked in order to explain the observed conductivity reversal. Finally, the stacking faults are structurally determined and their role in the reduction of the free electron mobility in highly doped InN:Mg is discussed.
Authors:
; ; ; ; ;  [1] ;  [2] ;  [3]
  1. Department of Physics, Chemistry, and Biology (IFM), Linköping University, S-581 83 Linköping (Sweden)
  2. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871 (China)
  3. Center for SMART Green Innovation Research, Chiba University, Chiba 263-8522 (Japan)
Publication Date:
OSTI Identifier:
22415110
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CONCENTRATION RATIO; DISLOCATIONS; DOPED MATERIALS; ELECTRON MOBILITY; INDIUM NITRIDES; MAGNESIUM; MICROSTRUCTURE; N-TYPE CONDUCTORS; POINT DEFECTS; P-TYPE CONDUCTORS; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY