skip to main content

SciTech ConnectSciTech Connect

Title: Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5–6 × 10{sup 19} cm{sup −3} as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration was 1.6 × 10{sup 18} cm{sup −3}. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.
Authors:
; ; ;  [1]
  1. Materials Department, University of California, Santa Barbara, California 93106 (United States)
Publication Date:
OSTI Identifier:
22415101
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 22; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; AMMONIA; CATHODOLUMINESCENCE; CONCENTRATION RATIO; DOPED MATERIALS; GALLIUM NITRIDES; INDIUM; ION MICROPROBE ANALYSIS; MAGNESIUM; MASS SPECTROSCOPY; MOLECULAR BEAM EPITAXY; SURFACTANTS