Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN
Abstract
We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5–6 × 10{sup 19} cm{sup −3} as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration was 1.6 × 10{sup 18} cm{sup −3}. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.
- Authors:
-
- Materials Department, University of California, Santa Barbara, California 93106 (United States)
- Publication Date:
- OSTI Identifier:
- 22415101
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 106; Journal Issue: 22; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; AMMONIA; CATHODOLUMINESCENCE; CONCENTRATION RATIO; DOPED MATERIALS; GALLIUM NITRIDES; INDIUM; ION MICROPROBE ANALYSIS; MAGNESIUM; MASS SPECTROSCOPY; MOLECULAR BEAM EPITAXY; SURFACTANTS
Citation Formats
Kyle, Erin C. H.,, Kaun, Stephen W., Young, Erin C., and Speck, James S. Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN. United States: N. p., 2015.
Web. doi:10.1063/1.4922216.
Kyle, Erin C. H.,, Kaun, Stephen W., Young, Erin C., & Speck, James S. Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN. United States. https://doi.org/10.1063/1.4922216
Kyle, Erin C. H.,, Kaun, Stephen W., Young, Erin C., and Speck, James S. 2015.
"Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN". United States. https://doi.org/10.1063/1.4922216.
@article{osti_22415101,
title = {Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN},
author = {Kyle, Erin C. H., and Kaun, Stephen W. and Young, Erin C. and Speck, James S.},
abstractNote = {We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5–6 × 10{sup 19} cm{sup −3} as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration was 1.6 × 10{sup 18} cm{sup −3}. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.},
doi = {10.1063/1.4922216},
url = {https://www.osti.gov/biblio/22415101},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 22,
volume = 106,
place = {United States},
year = {Mon Jun 01 00:00:00 EDT 2015},
month = {Mon Jun 01 00:00:00 EDT 2015}
}