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Title: Non-vacuum growth of graphene films using solid carbon source

This study demonstrates that air annealing can grow high-quality graphene films on the surface of polycrystalline nickel film with the help of an effective SiO{sub 2} capping layer. The number of graphene layers can be modulated by the amount of carbon embedded in the Ni film before annealing. Raman analysis results, transmission electron microscopy images, and electron diffraction patterns of the samples confirm that graphene films can be grown in air with an oxygen blocking layer and a 10 °C/s cooling rate in an open-vented rapid thermal annealing chamber or an open tube furnace. The high-quality low-defect air-annealing grown graphene is comparable to commercially available graphene grown via chemical vapor deposition. The proposed graphene growth using air annealing technique is simple and low-cost, making it highly attractive for mass production. It is transfer-free to a silicon substrate and can speed up graphene development, opening up new applications.
Authors:
 [1] ;  [2] ;  [1] ;  [3] ;  [4] ;  [3]
  1. Department of Mechanical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China)
  2. (Viet Nam)
  3. (China)
  4. Center for Micro/Nano Science and Technology, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China)
Publication Date:
OSTI Identifier:
22415099
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 22; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ANNEALING; CHEMICAL VAPOR DEPOSITION; DEPLETION LAYER; ELECTRON DIFFRACTION; FILMS; GRAPHENE; NICKEL; OXYGEN; SILICON; SILICON OXIDES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY