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Title: Electron states in semiconductor quantum dots

In this work, the electronic structures of quantum dots (QDs) of nine direct band gap semiconductor materials belonging to the group II-VI and III-V families are investigated, within the empirical tight-binding framework, in the effective bond orbital model. This methodology is shown to accurately describe these systems, yielding, at the same time, qualitative insights into their electronic properties. Various features of the bulk band structure such as band-gaps, band curvature, and band widths around symmetry points affect the quantum confinement of electrons and holes. These effects are identified and quantified. A comparison with experimental data yields good agreement with the calculations. These theoretical results would help quantify the optical response of QDs of these materials and provide useful input for applications.
Authors:
 [1] ;  [2] ; ;  [3]
  1. Department of Physics, University of North Texas, P.O. Box 311427, Denton, Texas 76203 (United States)
  2. High Pressure and Synchrotron Radiation Physics Division, Physics Group, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India)
  3. Centre for Nanotechnology, University of Toronto, 170 College Street, Toronto, Ontario M5S 3E3 (Canada)
Publication Date:
OSTI Identifier:
22413250
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Chemical Physics; Journal Volume: 141; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRONIC STRUCTURE; ELECTRONS; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; YIELDS