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Title: Low-energy photoelectron imaging of HS{sub 2} anion

Low-energy photoelectron imaging of HS{sub 2}{sup −} has been investigated, which provides the vibrational frequencies of the ground state as well as the first excited state of HS{sub 2}. It allows us to determine more accurate electron affinity of HS{sub 2}, 1.9080 ± 0.0018 eV. Combined with Frank-Condon simulation, the vibrational features have been unveiled related to S-S stretching and S-S-H bending modes for the ground state and S-S stretching, S-S-H bending, and S-H stretching modes for the first excited state. Photoelectron angular distributions are mainly characteristic of electron detachment from two different molecular orbitals (MOs) in HS{sub 2}{sup −}. With the aid of accurate electron affinity value of HS{sub 2}, corresponding thermochemical quantities can be accessed.
Authors:
 [1] ;  [2] ;  [3] ; ; ;  [1]
  1. State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China)
  2. (China)
  3. Department of Physics, Anhui Normal University, Wuhu, Anhui 241000 (China)
Publication Date:
OSTI Identifier:
22413246
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Chemical Physics; Journal Volume: 141; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; AFFINITY; ANGULAR DISTRIBUTION; ANIONS; ELECTRON DETACHMENT; EXCITED STATES; GROUND STATES; SILICON OXIDES; SIMULATION