Quasi-two-dimensional electron gas at the epitaxial alumina/SrTiO{sub 3} interface: Control of oxygen vacancies

Kormondy, Kristy J.; Posadas, Agham B.; Ngo, Thong Q.; Ekerdt, John G.; Lu, Sirong; Smith, David J.; McCartney, Martha R.; Goble, Nicholas; Gao, Xuan P. A.; Jordan-Sweet, Jean

doi:10.1063/1.4913860

Title: Quasi-two-dimensional electron gas at the epitaxial alumina/SrTiO{sub 3} interface: Control of oxygen vacancies

Journal Article · Sat Mar 07 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4913860· OSTI ID:22413227

Kormondy, Kristy J.; Posadas, Agham B.; Ngo, Thong Q.; Ekerdt, John G. ^[1]; Lu, Sirong; Smith, David J.; McCartney, Martha R. ^[2]; Goble, Nicholas; Gao, Xuan P. A. ^[3]; Jordan-Sweet, Jean ^[4]

Department of Chemical Engineering, University of Texas at Austin, Austin, Texas 78712 (United States)
Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)
Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106 (United States)
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States)

In this paper, we report on the highly conductive layer formed at the crystalline γ-alumina/SrTiO{sub 3} interface, which is attributed to oxygen vacancies. We describe the structure of thin γ-alumina layers deposited by molecular beam epitaxy on SrTiO{sub 3} (001) at growth temperatures in the range of 400–800 °C, as determined by reflection-high-energy electron diffraction, x-ray diffraction, and high-resolution electron microscopy. In situ x-ray photoelectron spectroscopy was used to confirm the presence of the oxygen-deficient layer. Electrical characterization indicates sheet carrier densities of ∼10{sup 13 }cm{sup −2} at room temperature for the sample deposited at 700 °C, with a maximum electron Hall mobility of 3100 cm{sup 2}V{sup −1}s{sup −1} at 3.2 K and room temperature mobility of 22 cm{sup 2}V{sup −1}s{sup −1}. Annealing in oxygen is found to reduce the carrier density and turn a conductive sample into an insulator.

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OSTI ID:: 22413227

Journal Information:: Journal of Applied Physics, Vol. 117, Issue 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979

Country of Publication:: United States

Language:: English

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75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
ANNEALING
CARRIER DENSITY
ELECTRON DIFFRACTION
ELECTRON GAS
ELECTRON MICROSCOPY
ELECTRONS
INTERFACES
LAYERS
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Title: Quasi-two-dimensional electron gas at the epitaxial alumina/SrTiO{sub 3} interface: Control of oxygen vacancies

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