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Title: Influence of deep level defects on carrier lifetime in CdZnTe:In

The defect levels and carrier lifetime in CdZnTe:In crystal were characterized with photoluminescence, thermally stimulated current measurements, as well as contactless microwave photoconductivity decay (MWPCD) technique. An evaluation equation to extract the recombination lifetime and the reemission time from MWPCD signal is developed based on Hornbeck-Haynes trapping model. An excellent agreement between defect level distribution and carrier reemission time in MWPCD signal reveals the tail of the photoconductivity decay is controlled by the defect level reemission effect. Combining {sup 241}Am gamma ray radiation response measurement and laser beam induced transient current measurement, it predicted that defect level with the reemission time shorter than the collection time could lead to better charge collection efficiency of CdZnTe detector.
Authors:
; ; ; ; ; ;  [1]
  1. State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi 710072 (China)
Publication Date:
OSTI Identifier:
22413220
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMERICIUM 241; CADMIUM COMPOUNDS; CARRIER LIFETIME; CHARGE COLLECTION; CRYSTALS; EFFICIENCY; EVALUATION; GAMMA RADIATION; LASER RADIATION; MICROWAVE RADIATION; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; RECOMBINATION; TRANSIENTS; TRAPPING; ZINC TELLURIDES