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Title: Structural properties and dielectric function of graphene grown by high-temperature sublimation on 4H-SiC(000-1)

Understanding and controlling growth of graphene on the carbon face (C-face) of SiC presents a significant challenge. In this work, we study the structural, vibrational, and dielectric function properties of graphene grown on the C-face of 4H-SiC by high-temperature sublimation in an argon atmosphere. The effect of growth temperature on the graphene number of layers and crystallite size is investigated and discussed in relation to graphene coverage and thickness homogeneity. An amorphous carbon layer at the interface between SiC and the graphene is identified, and its evolution with growth temperature is established. Atomic force microscopy, micro-Raman scattering spectroscopy, spectroscopic ellipsometry, and high-resolution cross-sectional transmission electron microscopy are combined to determine and correlate thickness, stacking order, dielectric function, and interface properties of graphene. The role of surface defects and growth temperature on the graphene growth mechanism and stacking is discussed, and a conclusion about the critical factors to achieve decoupled graphene layers is drawn.
Authors:
; ; ; ;  [1] ; ; ; ; ;  [2] ; ;  [3]
  1. Department of Physics, Chemistry and Biology, IFM, Linköping University, Linköping S-58183, SE (Sweden)
  2. CNRS Laboratoire Charles Coulomb, UMR 5221, Université Montpellier 2, F-34095 Montpellier (France)
  3. Department of Electrical Engineering and Center for Nanohybrid Functional Materials, University of Nebraska-Lincoln, Lincoln, Nebraska 68588 (United States)
Publication Date:
OSTI Identifier:
22413190
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ARGON; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DIELECTRIC MATERIALS; ELLIPSOMETRY; GRAPHENE; INTERFACES; LAYERS; RAMAN SPECTROSCOPY; SILICON CARBIDES; SUBLIMATION; SURFACES; TEMPERATURE DEPENDENCE; TRANSMISSION ELECTRON MICROSCOPY