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Title: Effects of disorder on spin injection and extraction for organic semiconductor spin-valves

A device model for tunnel injection and extraction of spin-polarized charge carriers between ferromagnetic contacts and organic semiconductors with disordered molecular states is presented. Transition rates for tunneling are calculated based on a transfer Hamiltonian. Transport in the bulk semiconductor is described by macroscopic device equations. Tunneling predominantly involves organic molecular levels near the metal Fermi energy, and therefore typically in the tail of the band that supports carrier transport in the semiconductor. Disorder-induced broadening of the relevant band plays a critical role for the injection and extraction of charge carriers and for the resulting magneto-resistance of an organic semiconductor spin valve.
Authors:
;  [1] ; ;  [1] ;  [2]
  1. University of Minnesota, Minneapolis, Minnesota 55455 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22413188
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE CARRIERS; FERMI LEVEL; FERROMAGNETIC MATERIALS; FERROMAGNETISM; HAMILTONIANS; MAGNETORESISTANCE; METALS; ORGANIC SEMICONDUCTORS; SPIN; SPIN ORIENTATION; TUNNEL EFFECT; VALVES