skip to main content

Title: A model for thermal oxidation of Si and SiC including material expansion

A model based on drift-diffusion-reaction kinetics for Si and SiC oxidation is discussed, which takes the material expansion into account with an additional convection term. The associated velocity field is determined self-consistently from the local reaction rate. The approach allows a calculation of the densities of volatile species in an nm-resolution at the oxidation front. The model is illustrated with simulation results for the growth and impurity redistribution during Si oxidation and for carbon and silicon emission during SiC oxidation. The approach can be useful for the prediction of Si and/or C interstitial distribution, which is particularly relevant for the quality of metal-oxide-semiconductor electronic devices.
Authors:
;  [1] ;  [2]
  1. ABB Corporate Research, Segelhofstrasse 1K, CH-5405 Baden (Switzerland)
  2. ETH Zürich, Seminar for Applied Mathematics, Rämistrasse 101, CH-8092 Zürich (Switzerland)
Publication Date:
OSTI Identifier:
22413179
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARBON; CONVECTION; CRYSTAL GROWTH; DIFFUSION; MOS TRANSISTORS; OXIDATION; REACTION KINETICS; RESOLUTION; SILICON; SILICON CARBIDES; VELOCITY; VOLATILITY