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Title: Growth of very large InN microcrystals by molecular beam epitaxy using epitaxial lateral overgrowth

Very thick InN (∼40 μm) was grown by molecular beam epitaxy using the epitaxial lateral overgrowth (ELO) technique. In some regions, the ELO of InN was observed as expected, indicating an important step toward fabricating quasi-bulk InN substrates. Interestingly, most parts of the sample consist of large flat-topped microcrystals and well-faceted microstructures. This is likely due to local growth condition variations during ELO, which is supported by an experiment where ELO of InN was performed on a substrate with various stripe mask patterns. TEM characterization of a flat top InN microcrystal revealed few stacking faults and only related threading dislocations. Defect-free small faceted microcrystals were also observed. The thick InN crystals show a narrow photoluminescence spectrum with a peak at 0.679 eV and linewidth of 16.8 meV at 4 K.
Authors:
 [1] ; ;  [1] ;  [2]
  1. Department of Engineering and Applied Sciences, Sophia University, 7-1 Kioicho, Chiyoda-ku, Tokyo 102-8554 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22413174
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL GROWTH; CRYSTALS; DISLOCATIONS; EMISSION SPECTRA; EMISSION SPECTROSCOPY; INDIUM NITRIDES; LINE WIDTHS; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; STACKING FAULTS; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY