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Title: Increase of self-heating effects in nanodevices induced by surface roughness: A full-quantum study

We present a full-quantum approach to investigate self-heating effects in nanoelectronic devices and exploit it to simulate rough nanowire field-effect transistors. Self-heating is found to significantly contribute (up to about 16%) to the degradation of the transistor performances, with an impact that is stronger for stronger roughness. The mechanism at the origin of the enhanced backscattering is the temperature increase due to the thermal conductivity reduction and the consequent increase of electron-phonon coupling.
Authors:
;  [1] ;  [2]
  1. Univ. Grenoble Alpes, IMEP-LAHC, F-38016 Grenoble (France)
  2. (France)
Publication Date:
OSTI Identifier:
22413173
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BACKSCATTERING; ELECTRON-PHONON COUPLING; FIELD EFFECT TRANSISTORS; HEATING; NANOELECTRONICS; PERFORMANCE; REDUCTION; ROUGHNESS; SURFACES; TEMPERATURE DEPENDENCE; THERMAL CONDUCTIVITY