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Title: On the modified active region design of interband cascade lasers

Type II InAs/GaInSb quantum wells (QWs) grown on GaSb or InAs substrates and designed to be integrated in the active region of interband cascade lasers (ICLs) emitting in the mid infrared have been investigated. Optical spectroscopy, combined with band structure calculations, has been used to probe their electronic properties. A design with multiple InAs QWs has been compared with the more common double W-shaped QW and it has been demonstrated that it allows red shifting the emission wavelength and enhancing the transition oscillator strength. This can be beneficial for the improvements of the ICLs performances, especially when considering their long-wavelength operation.
Authors:
; ; ; ;  [1] ; ; ;  [2] ;  [2] ;  [3]
  1. Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, Wrocław (Poland)
  2. Technische Physik, University of Würzburg and Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, Am Hubland, D-97074 Würzburg (Germany)
  3. (United Kingdom)
Publication Date:
OSTI Identifier:
22413172
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION SPECTROSCOPY; COMPARATIVE EVALUATIONS; CRYSTAL GROWTH; ELECTRONIC STRUCTURE; GALLIUM ANTIMONIDES; INDIUM ARSENIDES; LASERS; OPERATION; OSCILLATOR STRENGTHS; PERFORMANCE; PROBES; QUANTUM WELLS; RED SHIFT; SUBSTRATES; WAVELENGTHS