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Title: Effect of number of stack on the thermal escape and non-radiative and radiative recombinations of photoexcited carriers in strain-balanced InGaAs/GaAsP multiple quantum-well-inserted solar cells

Three non-destructive methodologies, namely, surface photovoltage (SPV), photoluminescence, and piezoelectric photothermal (PPT) spectroscopies, were adopted to detect the thermal carrier escape from quantum well (QW) and radiative and non-radiative carrier recombinations, respectively, in strain-balanced InGaAs/GaAsP multiple-quantum-well (MQW)-inserted GaAs p-i-n solar cell structure samples. Although the optical absorbance signal intensity was proportional to the number of QW stack, the signal intensities of the SPV and PPT methods decreased at high number of stack. To explain the temperature dependency of these signal intensities, we proposed a model that considers the three carrier dynamics: the thermal escape from the QW, and the non-radiative and radiative carrier recombinations within the QW. From the fitting procedures, it was estimated that the activation energies of the thermal escape ΔE{sub barr} and non-radiative recombination ΔE{sub NR} were 68 and 29 meV, respectively, for a 30-stacked MQW sample. The estimated ΔE{sub barr} value agreed well with the difference between the first electron subband and the top of the potential barrier in the conduction band. We found that ΔE{sub barr} remained constant at approximately 70 meV even with increasing QW stack number. However, the ΔE{sub NR} value monotonically increased with the increase in the number of stack. Since this implies thatmore » non-radiative recombination becomes improbable as the number of stack increases, we found that the radiative recombination probability for electrons photoexcited within the QW increased at a large number of QW stack. Additional processes of escaping and recapturing of carriers at neighboring QW were discussed. As a result, the combination of the three non-destructive methodologies provided us new insights for optimizing the MQW components to further improve the cell performance.« less
Authors:
; ;  [1] ;  [2] ; ;  [3] ;  [4]
  1. Faculty of Engineering, University of Miyazaki, 1-1 Gakuen-Kibanadai-Nishi, Miyazaki 889-2192 (Japan)
  2. Interdisciplinary Research Organization, University of Miyazaki, 1-1 Gakuen-Kibanadai-Nishi, Miyazaki 889-2192 (Japan)
  3. Research Center for Advanced Science and Technology, The University of Tokyo, Bunkyo-ku, Tokyo 113-0032 (Japan)
  4. School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-0032 (Japan)
Publication Date:
OSTI Identifier:
22413168
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; APPROXIMATIONS; CHARGE CARRIERS; ELECTRONS; EMISSION SPECTROSCOPY; EXCITATION; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; INDIUM ARSENIDES; OPTIMIZATION; PERFORMANCE; PHOTOLUMINESCENCE; PIEZOELECTRICITY; QUANTUM WELLS; RECOMBINATION; SOLAR CELLS; STRAINS; SURFACES