Room-temperature amorphous alloy field-effect transistor exhibiting particle and wave electronic transport

Journal Article · Sat Feb 28 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4913296· OSTI ID:22413164

Kawarada, H. ^[1]

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1. Research and Development Center, Waseda University, Tokyo 162-0041 (Japan)

The realization of room-temperature macroscopic field effect transistors (FETs) will lead to new epoch-making possibilities for electronic applications. The I{sub d}-V{sub g} characteristics of the millimeter-sized aluminum-oxide amorphous alloy (Ni{sub 0.36}Nb{sub 0.24}Zr{sub 0.40}){sub 90}H{sub 10} FETs were measured at a gate-drain bias voltage of 0–60 μV in nonmagnetic conditions and under a magnetic fields at room temperature. Application of dc voltages to the gate electrode resulted in the transistor exhibiting one-electron Coulomb oscillation with a period of 0.28 mV, Fabry-Perot interference with a period of 2.35 μV under nonmagnetic conditions, and a Fano effect with a period of 0.26 mV for Vg and 0.2 T under a magnetic field. The realization of a low-energy controllable device made from millimeter-sized Ni-Nb-Zr-H amorphous alloy throws new light on cluster electronics.

• OSTI ID: 22413164
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
AMORPHOUS STATE
COULOMB FIELD
ELECTRIC POTENTIAL
ELECTRONS
FIELD EFFECT TRANSISTORS
INTERFERENCE
MAGNETIC FIELDS
NICKEL COMPOUNDS
NIOBIUM COMPOUNDS
OSCILLATIONS
TEMPERATURE RANGE 0273-0400 K
VISIBLE RADIATION
ZIRCONIUM HYDRIDES