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Title: Structural and electrical characterization of CoTiN metal gates

As the gate size continues to decrease in nanoscale transistors, having metal gates with amorphous or near amorphous structures can potentially reduce grain-induced work function variation. Furthermore, amorphous materials are known to have superior diffusion barrier properties, which can help prevent work function change due to the diffusion of metals in contact with the gate. In this work we show that with the addition of cobalt, thin films of polycrystalline TiN become more amorphous with a smaller grain size. Co{sub x}(TiN){sub 1-x} films, where x = 60–80%, appear to consist of nanocrystals embedded in an amorphous matrix, and are thermally stable with no significant crystallization up to an annealing temperature of at least 600 °C. Reducing the nitrogen gas flow ratio during sputter deposition from 9% to 2.5% further decreases the films' crystallinity, which is apparent by more sparse and even smaller nanocrystals. In addition to being partially amorphous, these CoTiN films also exhibit good thermal stability, low resistivity, low roughness, and have the potential for atomic layer deposition compatibility. Even though these materials are not completely amorphous, their small crystal size and amorphous matrix can potentially reduce work function variation and improve their diffusion barrier property. These properties make CoTiN a goodmore » candidate as a gate material for future nanoelectronic devices and technology.« less
Authors:
; ; ; ;  [1] ; ;  [2]
  1. Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)
  2. Electrical Engineering, Stanford University, Stanford, California 94305 (United States)
Publication Date:
OSTI Identifier:
22413143
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; COBALT COMPOUNDS; CRYSTALLIZATION; DEPOSITION; DIFFUSION BARRIERS; GAS FLOW; GRAIN SIZE; NANOSTRUCTURES; NITROGEN; PHASE STABILITY; POLYCRYSTALS; POTENTIALS; ROUGHNESS; SPUTTERING; THIN FILMS; TITANIUM NITRIDES; VARIATIONS; WORK FUNCTIONS