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Title: Defect chemistry and chalcogen diffusion in thin-film Cu{sub 2}ZnSnSe{sub 4} materials

Selenium diffusion in polycrystalline thin-film Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSe) on molybdenum-coated soda-lime glass substrates was investigated by in situ monitoring of the molybdenum back-contact resistance during high-temperature selenization treatments. In these measurements, selenium diffusion through the CZTSe layer results in conversion of the molybdenum layer to MoSe{sub 2}, increasing the sheet resistance of the film stack. By monitoring the rate of MoSe{sub 2} formation as a function of annealing temperature, an activation energy of 0.5 ± 0.1 eV has been measured for selenium diffusion in CZTSe. The partial pressure dependence of chalcogen diffusion suggests that chalcogen vacancies are not the defect controlling chalcogen diffusion in thin-film CZTSe.
Authors:
; ;  [1]
  1. National Renewable Energy Laboratory (NREL), 15013 Denver West Parkway, Golden, Colorado 80401 (United States)
Publication Date:
OSTI Identifier:
22413137
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; ANNEALING; COPPER SULFIDES; DIFFUSION; ELECTRIC CONDUCTIVITY; EV RANGE; LAYERS; MOLYBDENUM; MOLYBDENUM SELENIDES; PARTIAL PRESSURE; POLYCRYSTALS; SELENIUM; SODIUM CARBONATES; SUBSTRATES; THIN FILMS; TIN SULFIDES; VACANCIES; ZINC SELENIDES