Defect chemistry and chalcogen diffusion in thin-film Cu{sub 2}ZnSnSe{sub 4} materials

Journal Article · Sat Feb 21 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4907951· OSTI ID:22413137

Harvey, Steven P.; Repins, Ingrid; Teeter, Glenn ^[1]

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1. National Renewable Energy Laboratory (NREL), 15013 Denver West Parkway, Golden, Colorado 80401 (United States)

Selenium diffusion in polycrystalline thin-film Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSe) on molybdenum-coated soda-lime glass substrates was investigated by in situ monitoring of the molybdenum back-contact resistance during high-temperature selenization treatments. In these measurements, selenium diffusion through the CZTSe layer results in conversion of the molybdenum layer to MoSe{sub 2}, increasing the sheet resistance of the film stack. By monitoring the rate of MoSe{sub 2} formation as a function of annealing temperature, an activation energy of 0.5 ± 0.1 eV has been measured for selenium diffusion in CZTSe. The partial pressure dependence of chalcogen diffusion suggests that chalcogen vacancies are not the defect controlling chalcogen diffusion in thin-film CZTSe.

• OSTI ID: 22413137
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
ANNEALING
COPPER SULFIDES
DIFFUSION
ELECTRIC CONDUCTIVITY
EV RANGE
LAYERS
MOLYBDENUM
MOLYBDENUM SELENIDES
PARTIAL PRESSURE
POLYCRYSTALS
SELENIUM
SODIUM CARBONATES
SUBSTRATES
THIN FILMS
TIN SULFIDES
VACANCIES
ZINC SELENIDES