skip to main content

SciTech ConnectSciTech Connect

Title: Obtaining strong ferromagnetism in diluted Gd-doped ZnO thin films through controlled Gd-defect complexes

We demonstrate the fabrication of reproducible long-range ferromagnetism (FM) in highly crystalline Gd{sub x}Zn{sub 1−x}O thin films by controlling the defects. Films are grown on lattice-matched substrates by pulsed laser deposition at low oxygen pressures (≤25 mTorr) and low Gd concentrations (x ≤ 0.009). These films feature strong FM (10 μ{sub B} per Gd atom) at room temperature. While films deposited at higher oxygen pressure do not exhibit FM, FM is recovered by post-annealing these films under vacuum. These findings reveal the contribution of oxygen deficiency defects to the long-range FM. We demonstrate the possible FM mechanisms, which are confirmed by density functional theory study, and show that Gd dopants are essential for establishing FM that is induced by intrinsic defects in these films.
Authors:
; ; ; ; ; ;  [1] ; ; ; ; ;  [2] ;  [3]
  1. Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia)
  2. Department of Materials and London Centre for Nanotechnology, Imperial College London, London SW7 2AZ (United Kingdom)
  3. Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States)
Publication Date:
OSTI Identifier:
22413130
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CADMIUM COMPOUNDS; CONCENTRATION RATIO; DENSITY FUNCTIONAL METHOD; DOPED MATERIALS; ENERGY BEAM DEPOSITION; FERROMAGNETIC MATERIALS; FERROMAGNETISM; LASER RADIATION; OXYGEN; PULSED IRRADIATION; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; ZINC OXIDES