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Title: Probing the carrier concentration profiles in phosphorus-implanted germanium using infrared spectroscopic ellipsometry

Spectroscopic ellipsometry with photon energy in the 0.045–0.65 eV range was used to investigate germanium samples implanted with 30 keV phosphorus ions and annealed at 700 °C. The infrared response of implanted layers is dominated by free carrier absorption which is modeled using a Drude oscillator. The carrier concentration profiles were modeled using an error function, and compared with those obtained by electrochemical capacitance-voltage profiling and secondary ion mass spectrometry. In the flat region of the carrier concentration profile, average carrier concentration and mobility of 1.40 × 10{sup 19} cm{sup −3} and 336 cm{sup 2}V{sup −1}s{sup −1}, respectively, were obtained. A phosphorus diffusivity of ∼1.2 × 10{sup −13} cm{sup 2}/s was obtained. The mobility versus carrier concentration relationships obtained for the implanted samples are close to the empirical relationship for bulk Ge.
Authors:
;  [1]
  1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore)
Publication Date:
OSTI Identifier:
22413125
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CAPACITANCE; CARRIER MOBILITY; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; ELECTRIC POTENTIAL; ELECTROCHEMISTRY; ELLIPSOMETRY; GERMANIUM; LAYERS; MASS SPECTROSCOPY; OSCILLATORS; PHOSPHORUS; PHOSPHORUS IONS; PHOTONS; PROBES