skip to main content

SciTech ConnectSciTech Connect

Title: Hot-electron energy relaxation time in Ga-doped ZnO films

Hot-electron energy relaxation time is deduced for Ga-doped ZnO epitaxial layers from pulsed hot-electron noise measurements at room temperature. The relaxation time increases from ∼0.17 ps to ∼1.8 ps when the electron density increases from 1.4 × 10{sup 17 }cm{sup −3} to 1.3 × 10{sup 20 }cm{sup −3}. A local minimum is resolved near an electron density of 1.4 × 10{sup 19 }cm{sup −3}. The longest energy relaxation time (1.8 ps), observed at the highest electron density, is in good agreement with the published values obtained by optical time-resolved luminescence and absorption experiments. Monte Carlo simulations provide a qualitative interpretation of our observations if hot-phonon accumulation is taken into account. The local minimum of the electron energy relaxation time is explained by the ultrafast plasmon-assisted decay of hot phonons in the vicinity of the plasmon–LO-phonon resonance.
Authors:
; ; ;  [1] ; ; ; ; ;  [2]
  1. Fluctuation Research Laboratory, Center for Physical Sciences and Technology, Vilnius 01108 (Lithuania)
  2. Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)
Publication Date:
OSTI Identifier:
22413121
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; COMPUTERIZED SIMULATION; DOPED MATERIALS; ELECTRON DENSITY; ELECTRONS; EPITAXY; FILMS; GALLIUM COMPOUNDS; LAYERS; LUMINESCENCE; MONTE CARLO METHOD; PHONONS; PLASMONS; RELAXATION TIME; TIME RESOLUTION; ZINC OXIDES