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Title: Magnetotransport phenomena in Bi{sub 2}Se{sub 3} thin film topological insulators grown by hybrid physical chemical vapor deposition

Intrinsic defects in Bi{sub 2}Se{sub 3} topological insulators tend to produce a high carrier concentration and current leakage through the bulk material. Bi{sub 2}Se{sub 3} thin films were grown by hybrid physical chemical vapor deposition on (0001) Al{sub 2}O{sub 3} substrates with high Se vapor pressure to reduce the occurrence of Se vacancies as the main type of defect. Consequently, the carrier concentration was reduced to ∼5.75 × 10{sup 18} cm{sup −3} comparable to reported carrier concentration in Bi{sub 2}Se{sub 3} thin films. Magnetotransport measurements were performed on the films and the data were analyzed for weak anti-localization using the Hikami-Larkin-Nagaoka model. The estimated α and l{sub ϕ} values showed good agreement with the symplectic case of 2-D transport of topological surface states in the quantum diffusion regime. The temperature and angular dependence of magnetoresistance indicate a large contribution of the 2-D surface carriers to overall transport properties of Bi{sub 2}Se{sub 3} thin film.
Authors:
;  [1] ; ;  [2]
  1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)
  2. Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
Publication Date:
OSTI Identifier:
22413113
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; BISMUTH SELENIDES; CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; DIFFUSION; LEAKAGE CURRENT; MAGNETORESISTANCE; SUBSTRATES; SURFACES; THIN FILMS; TOPOLOGY; VACANCIES; VAPOR PRESSURE