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Title: Multiple logic functions from extended blockade region in a silicon quantum-dot transistor

We demonstrate multiple logic-functions at room temperature on a unit device of the Si single electron transistor (SET). Owing to the formation of the multi-dot system, the device exhibits the enhanced Coulomb blockade characteristics (e.g., large peak-to-valley current ratio ∼200) that can improve the reliability of the SET-based logic circuits. The SET displays a unique feature useful for the logic applications; namely, the Coulomb oscillation peaks are systematically shifted by changing either of only the gate or the drain voltage. This enables the SET to act as a multi-functional one-transistor logic gate with AND, OR, NAND, and XOR functions.
Authors:
; ;  [1] ;  [2]
  1. Department of Semiconductor Science, Dongguk University-Seoul, Seoul 100-715 (Korea, Republic of)
  2. Institute of Industrial Science, University of Tokyo, Tokyo 153-8505 (Japan)
Publication Date:
OSTI Identifier:
22413106
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; COULOMB FIELD; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRONS; LOGIC CIRCUITS; OSCILLATIONS; QUANTUM DOTS; RELIABILITY; SILICON; TEMPERATURE RANGE 0273-0400 K; TRANSISTORS