Multiple logic functions from extended blockade region in a silicon quantum-dot transistor

Journal Article · Sat Feb 14 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4907799· OSTI ID:22413106

Lee, Youngmin; Lee, Sejoon; Im, Hyunsik ^[1]; Hiramoto, Toshiro ^[2]

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1. Department of Semiconductor Science, Dongguk University-Seoul, Seoul 100-715 (Korea, Republic of)
2. Institute of Industrial Science, University of Tokyo, Tokyo 153-8505 (Japan)

We demonstrate multiple logic-functions at room temperature on a unit device of the Si single electron transistor (SET). Owing to the formation of the multi-dot system, the device exhibits the enhanced Coulomb blockade characteristics (e.g., large peak-to-valley current ratio ∼200) that can improve the reliability of the SET-based logic circuits. The SET displays a unique feature useful for the logic applications; namely, the Coulomb oscillation peaks are systematically shifted by changing either of only the gate or the drain voltage. This enables the SET to act as a multi-functional one-transistor logic gate with AND, OR, NAND, and XOR functions.

• OSTI ID: 22413106
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
COULOMB FIELD
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRONS
LOGIC CIRCUITS
OSCILLATIONS
QUANTUM DOTS
RELIABILITY
SILICON
TEMPERATURE RANGE 0273-0400 K
TRANSISTORS