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Title: Frequency-dependent polarization-angle-phase-shift in the microwave-induced magnetoresistance oscillations

Linear polarization angle, θ, dependent measurements of the microwave radiation-induced oscillatory magnetoresistance, R{sub xx}, in high mobility GaAs/AlGaAs 2D electron devices have shown a θ dependence in the oscillatory amplitude along with magnetic field, frequency, and extrema-dependent phase shifts, θ{sub 0}. Here, we suggest a microwave frequency dependence of θ{sub 0}(f) using an analysis that averages over other smaller contributions, when those contributions are smaller than estimates of the experimental uncertainty.
Authors:
; ;  [1] ;  [2]
  1. Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States)
  2. Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zürich (Switzerland)
Publication Date:
OSTI Identifier:
22413098
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM ARSENIDES; CARRIER MOBILITY; ELECTRONS; FREQUENCY DEPENDENCE; GALLIUM ARSENIDES; INTERFACES; MAGNETIC FIELDS; MAGNETORESISTANCE; MICROWAVE RADIATION; OSCILLATIONS; PHASE SHIFT; POLARIZATION