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Title: Photoconductive properties of Bi{sub 2}S{sub 3} nanowires

The photoconductive properties of Bi{sub 2}S{sub 3} nanowires synthesized inside anodized alumina (AAO) membrane have been characterized as a function of illuminating photon energy between the wavelengths of 500 to 900 nm and at constant illumination intensity of 1–4 μW·cm{sup −2}. Photoconductivity spectra, photocurrent values, photocurrent onset/decay times of individual Bi{sub 2}S{sub 3} nanowires liberated from the AAO membrane were determined and compared with those of arrays of as-produced Bi{sub 2}S{sub 3} nanowires templated inside pores of AAO membrane. The alumina membrane was found to significantly influence the photoconductive properties of the AAO-hosted Bi{sub 2}S{sub 3} nanowires, when compared to liberated from the AAO membrane individual Bi{sub 2}S{sub 3} nanowires, possibly due to charge carrier trapping at the interface between the nanowire surface and the pore walls.
Authors:
; ;  [1] ; ;  [2] ;  [3]
  1. Institute of Chemical Physics, University of Latvia, Riga (Latvia)
  2. Materials Chemistry and Analysis Group, Department of Chemistry and the Tyndall National Institute, University College Cork, Cork (Ireland)
  3. (CRANN), Trinity College Dublin, Dublin 2 (Ireland)
Publication Date:
OSTI Identifier:
22413097
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; BISMUTH SULFIDES; CHARGE CARRIERS; COMPARATIVE EVALUATIONS; ILLUMINANCE; INTERFACES; MEMBRANES; NANOWIRES; PHOTOCONDUCTIVITY; PHOTOCURRENTS; SURFACES; TRAPPING