Synthesis, characterization of WS{sub 2} nanostructures by vapor phase deposition

Journal Article · Sat Feb 14 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4907688· OSTI ID:22413095

Fan, Yinping; Li, Jun; Luo, Siwei; Tang, Chao; Zhong, Jianxin ^[1]; Hao, Guolin ^[1]

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1. Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, Xiangtan University, Hunan 411105 (China)

Ultrathin two-dimensional WS{sub 2} nanostructures with various morphologies have been prepared on SiO{sub 2}/Si (300 nm) and sapphire substrates by vapor phase deposition method. Simultaneously, tungsten nanostructures have also been obtained during the growth process. The nanostructures and morphologies of as-prepared products were systematically characterized by employing atomic force microscopy, Raman spectroscopy as well as scanning electron spectroscopy. The electrostatic properties of WS{sub 2} nanostructures were investigated exhibiting uniform surface potential and charge distributions. We have also detected the photoluminescence properties of WS{sub 2} nanostructures, which are dependent on the thickness and nanostructures of synthesized WS{sub 2}. These results suggest that the optoelectronic properties of WS{sub 2} nanostructures can be effectively tuned by quantum confinement effect and nanostructures.

• OSTI ID: 22413095
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC FORCE MICROSCOPY
CHARGE DISTRIBUTION
DEPOSITION
ELECTRON SPECTROSCOPY
INTERFACES
MORPHOLOGY
NANOSTRUCTURES
PHOTOLUMINESCENCE
RAMAN SPECTROSCOPY
SAPPHIRE
SILICON
SILICON OXIDES
SUBSTRATES
SURFACE POTENTIAL
TUNGSTEN
TUNGSTEN SULFIDES
TWO-DIMENSIONAL SYSTEMS
VAPORS