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Title: Enhanced emission from mid-infrared AlInSb light-emitting diodes with p-type contact grid geometry

We report on the impact of lateral current spreading on light emission from aluminium indium antimonide (AlInSb) mid-infrared p-i-n light-emitting diodes (LEDs) grown by molecular beam epitaxy on a GaAs substrate. Due to the high effective mass of holes in Al{sub x}In{sub 1−x}Sb, the resistivity of p-type material determines the 3-D distribution of current flow in the devices. This work shows that maximum light emission, as measured by electroluminescence, and 3-times wall-plug efficiency improvement were obtained at room temperature from devices with a p-type contact grid geometry with a spacing of twice the current spreading length in the p-type material, which was measured by spatially resolved photocurrent. The LED with the optimal contact geometry exhibits improved performance at high injection current levels thanks to the more uniform carrier distribution across the device area.
Authors:
; ; ;  [1] ;  [1] ;  [2] ;  [3] ;  [4]
  1. Electronic and Nanoscale Engineering, School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom)
  2. (United Kingdom)
  3. Quantum Device Solutions, The West of Scotland Science Park, Block 7 Kelvin Campus, Glasgow G20 0TH (United Kingdom)
  4. Department of Imaging and Applied Physics, Curtin University, Perth, Western Australia 6845 (Australia)
Publication Date:
OSTI Identifier:
22413079
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; EFFECTIVE MASS; EFFICIENCY; ELECTROLUMINESCENCE; GALLIUM ARSENIDES; HOLES; INDIUM ANTIMONIDES; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; PERFORMANCE; P-TYPE CONDUCTORS; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; VISIBLE RADIATION