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Title: Atomistic simulation of damage accumulation and amorphization in Ge

Damage accumulation and amorphization mechanisms by means of ion implantation in Ge are studied using Kinetic Monte Carlo and Binary Collision Approximation techniques. Such mechanisms are investigated through different stages of damage accumulation taking place in the implantation process: from point defect generation and cluster formation up to full amorphization of Ge layers. We propose a damage concentration amorphization threshold for Ge of ∼1.3 × 10{sup 22} cm{sup −3} which is independent on the implantation conditions. Recombination energy barriers depending on amorphous pocket sizes are provided. This leads to an explanation of the reported distinct behavior of the damage generated by different ions. We have also observed that the dissolution of clusters plays an important role for relatively high temperatures and fluences. The model is able to explain and predict different damage generation regimes, amount of generated damage, and extension of amorphous layers in Ge for different ions and implantation conditions.
Authors:
;  [1] ;  [2] ;  [3] ;  [4]
  1. IMDEA Materials Institute, Eric Kandel 2, 28906 Getafe, Madrid (Spain)
  2. CEMES/CNRS, 29 rue J. Marvig, 31055 Toulouse Cedex (France)
  3. CEA, LETI, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)
  4. GLOBALFOUNDRIES Singapore Pte Ltd., 60 Woodlands Industrial Park D Street 2, Singapore 738406 (Singapore)
Publication Date:
OSTI Identifier:
22413070
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; APPROXIMATIONS; ATOMIC CLUSTERS; BUILDUP; CONCENTRATION RATIO; DAMAGE; DISSOLUTION; GERMANIUM; ION IMPLANTATION; LAYERS; MONTE CARLO METHOD; POINT DEFECTS; RECOMBINATION; TEMPERATURE DEPENDENCE